IISc team reshapes GaN transistors to power next wave of EVs & data centres
Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses sharply and shrink the size of power converters by almost three times. Yet commercial adoption has been cautious. In a two-part study, the team examined how the gate structure controls the flow of current and what determines the crucial threshold voltage.
Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses sharply and shrink the size of power converters by almost three times. Yet commercial adoption has been cautious. In a two-part study, the team examined how the gate structure controls the flow of current and what determines the crucial threshold voltage.
